IRF540N is an N Channel Power MOSFET. extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
TO-220 Package makes this device to handle 50 W power dissipation with ease.
VDSS = 100V
RDS(on) = 44mΩ
Note:- If IRF540 is not available we will send IRF740. if you accept then only place the order.